transistors 1 publication date: november 2002 sjc00070bed 2SB1209 silicon pnp triple diffusion planar type for low-frequency amplification features ? high collector-base voltage (emitter open) v cbo ? high collector-emitter voltage (base open) v ceo ? low collector-emitter saturation voltage v ce(sat) absolute maximum ratings t a = 25 c electrical characteristics t a = 25 c 3 c unit: mm 1: base 2: collector 3: emitter m-a1 package 6.9 0.1 2.5 0.1 (1.0) (1.0) (1.5) (0.85) 0.45 0.05 0.55 0.1 (2.5) (2.5) 21 3 r 0.7 r 0.9 (0.4) 3.5 0.1 4.5 0.1 4.1 0.2 2.4 0.2 1.25 0.05 2.0 0.2 1.0 0.1 (1.5) note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. parameter symbol rating unit collector-base voltage (emitter open) v cbo ? 400 v collector-emitter voltage (base open) v ceo ? 400 v emitter-base voltage (collector open) v ebo ? 5v collector current i c ? 100 ma peak collector current i cp ? 200 ma collector power dissipation * p c 1w junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c note) * : print circuit board: copper foil area of 1 cm 2 or more, and the board thickness of 1.7 mm for the collector portion parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = ? 100 a, i e = 0 ? 400 v collector-emitter voltage (base open) v ceo i c = ? 500 a, i b = 0 ? 400 v emitter-base voltage (collector open) v ebo i e = ? 100 a, i c = 0 ? 5v forward current transfer ratio h fe v ce = ? 5 v, i c = ? 30 ma 40 ? collector-emitter saturation voltage v ce(sat) i c = ? 10 ma, i b = ? 1 ma ? 0.6 v base-emitter saturation voltage v be(sat) i c = ? 50 ma, i b = ? 5 ma ? 1.5 v transition frequency f t v cb = ? 30 v, i e = 20 ma, f = 200 mhz 50 mhz collector output capacitance c ob v cb = ? 30 v, i e = 0, f = 1 mhz 9 pf (common base, input open circuited)
2SB1209 2 sjc00070bed v be(sat) ? i c h fe ? i c f t ? i e p c ? t a i c ? v ce v ce(sat) ? i c c ob ? v cb safe operation area 0 160 40 120 80 140 20 100 60 0 1.2 1.0 0.8 0.6 0.4 0.2 copper plate at the collector is more than 1 cm 2 in area, 1.7 mm in thickness collector power dissipation p c ( w ) ambient temperature t a ( c ) 0 ? 12 ? 10 ? 8 ? 2 ? 6 ? 4 0 ? 120 ? 100 ? 80 ? 60 ? 40 ? 20 t a = 25 c ? 0.1 ma ? 0.2 ma ? 0.3 ma ? 0.9 ma ? 0.8 ma ? 0.7 ma ? 0.6 ma ? 0.5 ma ? 0.4 ma i b = ? 1 ma collector current i c ( ma ) collector-emitter voltage v ce ( v ) 0 ? 1.0 ? 0.8 ? 0.2 ? 0.6 ? 0.4 0 ? 120 ? 100 ? 80 ? 60 ? 40 ? 20 v ce = ? 5 v ta = 75 c ? 25 c 25 c base-emitter voltage v be ( v ) collector current i c ( ma ) ? 0.1 ? 1 ? 10 ? 100 ? 0.01 ? 0.1 ? 1 ? 10 ? 100 i c / i b = 10 t c = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) ? 0.1 ? 1 ? 10 ? 100 0 240 200 160 120 80 40 v ce = ? 5 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) 1 10 100 1 000 0 120 100 80 60 40 20 v cb = ? 30 v t c = 25 c transition frequency f t ( mhz ) emitter current i e ( ma ) 1 10 100 0 30 25 20 15 10 5 i e = 0 f = 1 mhz t a = 25 c collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf) ? 1 ? 10 ? 100 ? 1 000 ? 0.1 ? 1 ? 10 ? 100 ? 1 000 single pulse t a = 25 c t = 10 ms t = 100 ms t = 1 s i cp i c collector current i c ( a ) collector-emitter voltage v ce ( v )
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